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DoE Method for Stress Optimization of PECVD Dielectric Thin Films Used in Microelectronics: Part I
(11/20/2008) FEO Issue 5
By Valerio Magazu, Numonyx
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Fixing dielectric film parameters in the development phase and keeping them repeatable during production is fundamental in microelectronics process flow. Interconnection and final passivation CVD dielectric layer properties can affect die attach (DA) cohesion in wire-bonded electronic packages. This work deals with the design of experiment (DoE) definition and application for PECVD thin dielectric films. Part I deals with the final interconnection level, which is addressed to optimize the intrinsic stress.



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